MOSFET N/P-CH 30V 8-SOIC IRF7379TR
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Description:
MOSFET N/P-CH 30V 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
IRF7379TR（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28768,Price reference "real-time change" China/Hongkong。 IRF7379TR package/specs, Download IRF7379TR、Datasheet。
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